Fig. 6: Transmission Electron Microscopy micrographs of a helium-implanted film annealed at 1273 K. | Communications Materials

Fig. 6: Transmission Electron Microscopy micrographs of a helium-implanted film annealed at 1273 K.

From: Improving the thermoelectric performance of scandium nitride thin films by implanting helium ions

Fig. 6

Bright field micrographs under 3-waves configuration, showing the presence of the He-implantation-induced nanocavities. The cavities distribution in the film is still aligned along grain boundaries. However, the density of nanocavities has increased compared to the as-implanted sample.

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