Fig. 7: Electronic transport properties of scandium nitride films annealed in different conditions.
From: Improving the thermoelectric performance of scandium nitride thin films by implanting helium ions
a Resistivity and b mobility curves of the ScN Reference (black), He-implanted and in-situ annealed at about 750 K (point-like defects recovered – red), He-implanted then annealed at 673 K (blue), and He-implanted then annealed at 1273 K (green) films. The charge carrier concentrations were measured to be constant over the whole temperature range. Standard deviations are 4% and 5% for the resistivity and mobility, respectively.
