Fig. 9: Thermal transport and thermoelectric figure of merit of scandium nitride films annealed in different conditions.
From: Improving the thermoelectric performance of scandium nitride thin films by implanting helium ions
a Thermal conductivity and b figure of merit zT of the Reference (black), He-implanted then in situ annealed at about 700 K (red), implanted then annealed at 673 K (blue), and implanted then annealed at 1273 K samples at room temperature (green). The lattice and electronic contributions to the thermal conductivity are displayed. Standard deviations are 13% and 20% for the thermal conductivity and zT, respectively.
