Fig. 2: Dark Current and multiplication gain measurements. | Communications Materials

Fig. 2: Dark Current and multiplication gain measurements.

From: High-temperature mid-wavelength infrared avalanche photodiode with modified fully-depleted absorption and multiplication region

Fig. 2

a Measured dark current density versus voltage curves of a 100 μm  × 100 μm device at 80 K and 160 K temperature. b Comparison of dark current density at different gains with the theoretical limit of electron diffusion current at 160 K. It is always less than the diffusion limit with a gain M < 5.8. c The measured multiplication gain along with the reverse bias at the temperature 80 K–160 K for 100 μm  × 100 μm device. The maximum gain is M = 189 at 160 K. d The calculated GNDCD at 80 K and 160 K, the dark current density and gain are from (a) and (c).

Back to article page