Fig. 3: Excess noise measurements. | Communications Materials

Fig. 3: Excess noise measurements.

From: High-temperature mid-wavelength infrared avalanche photodiode with modified fully-depleted absorption and multiplication region

Fig. 3

a The excess noise versus multiplication gain of the proposed 100 μm  × 100 μm APD device at 80 K, 160 K, and 200 K. b The comparison of different low-excess-noise APDs at different wavelengths and working temperatures with this work. The color of the solid circles represents the working temperature shown in the temperature bar, and the label around the circles indicates the cutoff wavelength.

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