Fig. 3: Ferroelectric properties of sputtered Al1-xScxN and AlN on GaN. | Communications Materials

Fig. 3: Ferroelectric properties of sputtered Al1-xScxN and AlN on GaN.

From: Toward ferroelectric AlN/GaN heterostructures and sputtered III-N thin films with metal organic chemical vapor deposition-like texture

Fig. 3

a J–E loops in dependence of Sc content measured at 40 kHz. Prior to the actual measurement, each sample was cycled 200 times to reduce differences in imprint. b The PUND corrected apparent switching polarization 2Pr in dependence on the Sc content determined at 40 kHz using a triangular voltage signal. Switching at the positive branch in (a) corresponds to the M-to-N-polarity inversion, and switching at the negative branch corresponds to the N-to-M-polarity inversion. The error bars are calculated via error propagation by assuming an error of 1 μm in the capacitors' diameter due to limited lithography capabilities. c The electric field extracted from (a) at which the displacement current locally peaks in dependence on the Sc content. For 0 and 8 at.% Sc, the exact film thickness was determined by TEM, while for all other Sc contents, error bars are included by assuming an error in film thickness of 5 nm.

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