Table 1 Comparison of the thermoelectric performance of CuI and AZO achieved in this study and previous works
No. | Material | Electrical conductivity (Sm−1) | In plane Seebeck (μV K−1) | Power factor (μWm−1 K−2) | Synthesis method | Reference |
|---|---|---|---|---|---|---|
1 | CuI | 2100 | 1161 | 2835 | SILAR | This work |
2 | CuI | 1000 | 150 | 30 | SILAR | |
3 | CuI | 1430 | 207 | 61.2 | SILAR | |
4 | CuI | 5000 | 115 | 66.1 | SILAR | |
5 | CuI doped Tb | 700 | 550 | 350 | Precipitation method | |
6 | CuI | 11,000 | 206 | 470 | Resistive thermal evaporation | |
7 | AZO | 5230 | −712 | 2655 | Electrochemical deposition | This work |
8 | GZO | − | −62 | − | Resistive thermal evaporation | |
9 | Zno:In | 625 | −120 | 9 | SILAR | |
10 | Zno:Al | 31,000 | −65 | 130 | Pulsed Laser | |
11 | ZnO nanorods | 1100 | −540 | 320 | Chemical bath deposition and microwave methods | |
12 | Ti-codoped AZO | 12800 | −102 | 1280 | Metallic buffer layer |
