Fig. 2: ARPES spectra and XPS spectra and I-V characteristics of the samples before and after treatment.
From: Room temperature photosensitive ferromagnetic semiconductor using MoS2
ARPES spectra of the pristine a and treated b samples. XPS spectra analysis of the Mo3d c and S2p d orbitals. Both show a decreasing tendency in their binding energies and intensities with increasing sputtering time. I–V characteristics of the FETs made with the monolayer and multilayer (5 L) samples before e and after f treatment. The FET structures are shown in the insets of e and f. After treatment, the curves of the monolayer and multilayer samples slightly decrease, which implies reduced mobility.
