Fig. 3: Magnetic properties of the treated samples.
From: Room temperature photosensitive ferromagnetic semiconductor using MoS2
PDOS of the S-edge a and Mo-edge b nanoholes. The red line represents the S-3p orbital, and the blue line represents the Mo-4d orbital. The spin densities of the two nanoholes are shown in the inset. c STM of the monolayer MoS2 sample before (left) and after applying a magnetic field (middle). In the middle picture, the magnetic domains are framed by green dashed lines. A hysteresis loop of the multilayer is shown in c (right). The scale bar is 3 nm. d MFM of the monolayer and multilayer MoS2 samples after treatment. In the monolayer sample, ferromagnetism and non-magnetism are clearly divided. In the multilayer sample (bottom left), three different layers are distinguished by the grey dashed line. In the multilayer sample (bottom right), different domains are framed by the red dashed line and green dashed line. e M-T characteristics of the multilayer MoS2 sample and the relationship among the number of layers, ion dose and magnetization of MoS2 (inset). Error bars of ± 10% are shown as a blue fading region. The M-T characteristics show a decreasing tendency (red line) after 320 K.
