Fig. 1: SRIM simulations showing the displacements per atom generated by uniform Au4+ ion irradiation at varying fluences. | npj Spintronics

Fig. 1: SRIM simulations showing the displacements per atom generated by uniform Au4+ ion irradiation at varying fluences.

From: Inducing a tunable skyrmion-antiskyrmion system through ion beam modification of FeGe films

Fig. 1

a Displacement profiles for 1011, 1012, 1013, and 1014 ions/cm2. b Vacancy profile highlighting Bragg peak well within depth of Si substrate. Note that all fluences show a Bragg peak in the same location. c Displacement energies (Edisplacement), lattice binding energies (Elattice), and surface binding energies (Esurface) for Fe, Ge, and Si used in the simulations, based on parameters from ref. 73.

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