Fig. 3: Two-dimensional materials.
a H-type stacking (right) and R-type stacking (left), corresponding to ferromagnetism and type-A antiferromagnetism, respectively. Adopted from ref. 76. b Magnetization map revealing a signature of periodicity in hexagonal meshes measured at −0.21 T. And simulation of the reconstructed magnetization map based on the predicted magnetic structures (Insets), the corresponding magnetic states. Adopted from ref. 78. c Three potential magnetic configurations for Cr1.2Te2 and total energy as a function of charge density with three magnetic configurations. Adopted from ref. 83. d Gated device structure and RMCD signal of the device when sweeping both the graphite top gate and silicon back gate. The pink region and red region correspond to the AFM state and FM state, respectively. Adopted from ref. 85. e Voltage control of TMR based on CrI3, reflective magnetic circular dichroism (RMCD) signal as a function of out-of-plane magnetic field and tunneling current (It) at representative bias and gate voltages (V = −240 mV, Vtg = 0 V, and Vbg = 0 V). Adopted from ref. 91. f Structure of WTe2/Fe3GeTe2 device and Rxy under sweeps of Ipulse at different temperatures with μ0Hx = ±30 mT. Adopted from ref. 96.
