Fig. 10: Proof-of-concept of selective operation in multipillar VG SOT-MRAM.
From: Recent progress in spin-orbit torque magnetic random-access memory
a Diagram illustrating the architecture of multi-terminal MTJs on a common SOT track. b Cross-sectional transmission electron microscopy (TEM) view of the integrated multi-pillar SOT device with four MTJ pillars. Separate top electrodes (TEs) enable individual voltage control and readout of the MTJs. c Diagram of the multi-pillar measurement setup and the switching loops for all combinations of ±VG (±0.5 V). d Experimental validation of selective operations on two bits. Sequential operations include MTJ initialization, input settings (gate voltages, and SOT writing current), and output readings (MTJ readout). Figure are reprinted with the permission from ref. 18, copyright 2022 by IEEE.
