Fig. 5: Comparing the switching characteristics of STT and SOT on identical 62 nm MTJ devices.
From: Recent progress in spin-orbit torque magnetic random-access memory
a, b The distribution of switching events is depicted relative to pulse voltage VSTT and SOT for different pulse durations τp (P-AP transition). c Critical switching voltage is shown as a function of the inverse of pulse duration, demonstrating switching frequencies up to 5 GHz. d Switching energy is illustrated over time, highlighting the ultrafast and low-power performance of SOT devices. The figure is reprinted with the permission from ref. 78, copyright 2018 by IEEE.
