Fig. 8: Schematic of the traditional SOT-MRAM design featuring margins in the SOT track. | npj Spintronics

Fig. 8: Schematic of the traditional SOT-MRAM design featuring margins in the SOT track.

From: Recent progress in spin-orbit torque magnetic random-access memory

Fig. 8

a An extreme SOT design with no margins is proposed to prevent power consumption within these margins. b Illustration of energy consumption (ESW) of devices with varying margins in width or length. The extreme devices exhibit the lowest ESW at 79 fJ/bit. c Endurance measurements conducted for 50% lifetime analysis using bipolar pulses under SOT stress for (left) various track widths with MTJ CD = 63 nm and (right) track lengths with MTJ CD = 81 nm. Figure are reprinted with the permission from ref. 108, copyright 2023 by IEEE.

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