Fig. 1: Spintronic origin of metallic and semiconducting transport in low RxA, STT-ready MTJs.
From: Oxygen vacancy-driven spin-transfer torque across MgO magnetic tunnel junctions
The temperature dependence of resistance for V = 100 mV MTJ-INL (black) and MTJ-H (red) nanopillar devices reveals a metallic behavior in the (a) P state, while it is (b) semiconducting in the MTJ’s AP state.
