Fig. 4: Localized states impact ST-FMR.
From: Oxygen vacancy-driven spin-transfer torque across MgO magnetic tunnel junctions
a ST-FMR spectra at 300 K on a MTJ-INL device for different bias voltages at \(\theta =185^{\circ}\) and Hext = 400 Oe. The inset shows magnetoresistance (MR) measured at 100 µA. The bias dependence of (b) parallel and (c) perpendicular torkance obtained from fits to the data of (a) change trends at 400 mV.
