Fig. 2: Sample overview.
From: Telecom wavelength quantum dots interfaced with silicon-nitride circuits via photonic wire bonding
a The photograph shows the fully assembled hybrid system, consisting of the In(Ga)As/GaAs QD sample, which is aligned to a PIC sample made from Si3N4. The aligned samples are glued to a SiC carrier chip. In the inset, a microscope picture of the fabricated MMIs can be seen. b The scanning electron micrograph shows the side couplers that couple the light from the chip to the collection objective. They are fabricated using DLW, and consist of a linear taper and a spherical lens. c Photonic wire bonds bridge the gap of roughly 30 μm between both samples. On the left the PIC sample can be seen with WGs and alignment markers made from Si3N4. d The highlighted area from c is shown as a close up. On the right two microlenses can be seen that have not been contacted, while on the left the interface of a PWB and a microlens is shown.
