Table 3 TDoE #3 Experimental Structure and Extent of Nitriding

From: Strength and thermal shock resistance of porous reaction-bonded silicon nitride by direct nitriding of binder jet additively manufactured silicon

Experiment

Time1 (h)

Temperature1 (°C)

Time2 (h)

Temperature2 (°C)

N2-4H2 flow rate (sccm)

Extent nitridation

1

8

1390

4

1400

400

26.17%

2

8

1390

4

1410

500

76.95%

3

8

1390

4

1450

600

82.30%

4

8

1390

8

1400

600

46.48%

5

8

1390

8

1410

400

80.76%

6

8

1390

8

1450

500

86.21%

7

8

1390

12

1400

500

60.29%

8

8

1390

12

1410

600

86.14%

9

8

1390

12

1450

400

82.84%