Fig. 1: Multilevel electronic synaptic device based on a MoS₂ memristor array.
From: Advanced AI computing enabled by 2D material-based neuromorphic devices
a Architectural schematic layout of the proposed 4 × 4 crossbar memristor array based on large-area direct grown MoS2 with 3D section view of the single memristor36. b Bipolar memory switching curve of the MoS2 memristor devices under voltages between −2.5 V and 2 V. c Memory operations of proposed memristor device in terms of endurance up to 500 sweep cycles at a read voltage of −1 V and d retention, measured up to 104 s at a read voltage of −1 V. e Recognition accuracy graph of SW-NN and HW-NN for each training epoch.
