Fig. 4: Ferroelectric gate using a bottom-gate MFMIS structure.
From: Advanced AI computing enabled by 2D material-based neuromorphic devices
a Schematic illustration of a biological synapse in a neuron system and our synaptic stack channel FET for neuromorphic function. b Transfer curves of MoSe2/MoS2 stack channel memory FET, showing asymmetric memory hysteresis behavior as measured under the double sweep of VGS. c OM image of a MoSe2/MoS2 stack channel memory FET. d 2D schematic structures of our MoSe2/MoS2 stack channel FET to describe electron traps at the MoSe2/MoS2 heterojunction interface e. Band diagram of MoSe2/MoS2 heterojunction and analytical energy band diagrams of channel FET under corresponding d84.
