Figure 1
From: Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot
SEM and schematic view of the device.
(a) Scanning electron micrograph of a device identical to that measured. (b) (Not to scale) Schematic cross-section view of the Si MOS double quantum dot. The architecture is defined by B1, B2 and B3 (barrier gates), L1 and L2 (lead gates) and P1 and P2 (plunger gates). The gates are separated by an Al2O3 layer (light gray). Positive voltages applied to the lead and plunger gates induce an electron layer (black dashes) underneath the SiO2. By tuning the barrier gates, Dot 1 and Dot 2 are formed. The coupling of the dots is adjusted using the middle barrier (B2). The regions coloured with red are the n+ source (S) and drain (D) contacts formed via diffused phosphorus.
