Figure 4 | Scientific Reports

Figure 4

From: Enabling Universal Memory by Overcoming the Contradictory Speed and Stability Nature of Phase-Change Materials

Figure 4

Nanoeffects of PCRAM.

(a) Dependence of the resistance on the annealing temperature of NGST films. Sharper fall in the resistance at higher temperatures is observed for the NGST films with 5 nm grains compared to that of the NGST films with 9 nm grains. (b) Cell size dependent crystallization temperature of PCRAMs. The crystallization temperature becomes lower as the cell size decreases. (c) Simulated temperature profiles of PCRAM in the several 10 ns timescale. Shorter time was needed to phase-change a smaller active region. Tc refers to the crystallization temperature of the phase-change material.

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