Table 2 Spontaneous emission time (s) in a 3.1 nm [110] SiNW (at −5% strain with indirect bandgap). * Role of LO phonons is more significant than LA phonons (100 times more) in determining the emission times
From: Reversible Modulation of Spontaneous Emission by Strain in Silicon Nanowires
Spontaneous emission time (s) for indirect bandgap nanowire | ||
|---|---|---|
Polarization | LA phonons included | LO phonons* included |
τx | 7.5 × 10+5 s | 3.5 × 10+3 s |
τy | 5.4 × 10+5 s | 1.9 × 10+3 s |
τz | 3.4 × 10+3 s | 16.1 s |
τavg | 3.4 × 10+3 s | 16.1 s |
