Figure 4 | Scientific Reports

Figure 4

From: Unraveling Metal-insulator Transition Mechanism of VO2Triggered by Tungsten Doping

Figure 4

Models and theoretical calculations.

Models of LS distortions of three representative doped concentrations (a) 0.54%, (b) 0.95% and (c) 2.38%. The white area displays the LS evolutions around W atoms. The variations of average W-W distances and [WO6] octahedral geometries are shown in the left top and bottom panel, respectively. (d) The relaxed structure projected along [010] axis and (e) the corresponding spatial redistribution of charge density of W doped VO2 with about 0.6% concentration; |ΔR| (|ΔR| = |Rdistorted−Rprevious|) based on calculation results give a distinct pattern of doped effects. The blue and red isosurfaces correspond to charge densities of 0.005 e/Å−3 and −0.005 e/Å−3, respectively. (f) A schematic diagram of concentration scaled influences of W dopants in VO2, in which shows the low concentration with isolated dopants and the high concentration with interactional dopants.

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