Figure 4
From: Production of Graphite Chloride and Bromide Using Microwave Sparks
(a) Schematic illustration of the fabrication of a G–Cl device. (b) Current−voltage (Ids−Vds) characteristics of the same device annealed at different temperatures. (c) Current−gate voltage (Ids−Vgs) curves for a G–Cl device measured in air, after annealing at 600°C. (d) AFM image of a G–Br FET device. (e) Current−gate voltage (Ids−Vgs) curves for the device in (d). (f) SEM image of annealed G–Cl electrode arrays with different widths (the black bar is 500 nm). (g) Current−gate voltage (Ids−Vgs) curves for a pentacene device with a graphene electrode. (h) Ids−Vds characteristics at various Vg for the device (g) in air.
