Figure 6
From: Tunable and sizable band gap in silicene by surface adsorption
Device performance of the Na-covered (N = 50%) silicene FET.
The bias voltage is set to 0.1 V. (a) Transmission spectra with Vg = 0, −18 and −30 V, respectively. The vertical dashed-line indicates the bias window. The details in the bias window are provided in the left insets. The right insets are sketches illustrating the relative positions of Ef and the gap manipulated by Vg. (b) Transmission eigenstates (at E = Ef and k-point = (0, 1/3)) of the on-state (Vg = 0 V) and off-state (Vg = −30 V). The isovalue is 0.2 a.u. (c) Transfer characteristic in linear (left axis) and logarithmic scales (right axis).
