Figure 3
From: Batch-fabricated high-performance graphene Hall elements
Controlled Dirac point voltage and Hall elements sensitivity.
(a) Hall voltage versus magnetic field in current mode and at varying back gate voltage. Inset: current-related sensitivity as a function of the back gate voltage. (b) Transfer characteristics of two typical GHEs at a bias of 50 mV. The olive curve represents the GHE being fabricated through the normal process and the blue curve represents that being fabricated on a substrate which was modified by APTES before graphene was transferred. (c) Statistical comparison of Dirac point voltages of GHEs with or without substrate modification. (d) Hall voltage versus magnetic field of a typical GHE with APTES modification in current mode without applying back gate voltage.
