Table 1 Characteristic properties and vertical locations of the TSS in different CI/TI heterostructures. The values for the band gap (Vg), spin-orbit splitting (ΔSO) and work function (Φ) are obtained for free-standing single-layered CIs; the bulk lattice constants (a) of the CI are from experiments. The last three columns indicate the lattice mismatch (Δa), binding energy (Eb) between the CI and TI and the location of the TSS (Z). The values in the square brackets are the corresponding values for the TI substrates
System (Substrate) | Vg (eV) | ΔSO (eV) | Φ (eV) | a (Å) | Δa | Eb (eV) | Z |
|---|---|---|---|---|---|---|---|
ZnS (Bi2Se3) | 1.82 (0.40) | 0.03 | 6.10 (5.55) | 3.82 (4.14) | +8.4% | 0.06 | Interface |
ZnSe (Bi2Se3) | 1.58 (0.40) | 0.20 | 5.77 (5.55) | 4.00 (4.14) | +3.5% | 0.09 | Top |
ZnTe (Bi2Se3) | 1.85 (0.40) | 0.55 | 3.98 (5.55) | 4.31 (4.14) | −3.9% | 0.29 | Inside |
ZnTe (Bi2Te3) | 1.39 (0.39) | 0.48 | 4.93 (5.00) | 4.31 (4.38) | +1.6% | 0.19 | Top |
