Figure 3
From: Tunable transport gap in narrow bilayer graphene nanoribbons
The further opening of transport gap in bilayer graphene nanoribbon by breaking the inversion symmetry.
(a–b), Schematic images of (a), bilayer graphene sheet and (b), bilayer graphene nanoribbon with a vertical electrical displacement field and corresponding energy band structure before and after applying the displacement field. (c), Switching behavior of a bilayer graphene sheet FET at VDS = 0.1 V and VBG varied from 60 to −90 V in steps of 30 V. (d), Switching behavior of a bilayer graphene nanoribbon FETs at VDS = 0.1 V and VBG varied from 60 to −100 V in steps of 20 V.
