Figure 1
From: Fast flexible electronics with strained silicon nanomembranes
Strain sharing using Si/SiGe/Si epitaxial trilayer structure.
(a), i, Atomic lattice schematic diagram showing the strain sharing principle. Optical images show the strained NM during release and after finishing release. ii, Process flow to implement the strain sharing principle. (b), i, Critical and metastable thicknesses of SiGe that can be coherently grown on Si. ii, Si strain as a function of Ge fraction in SiGe used to guide the design and epitaxial growth of Si/SiGe/Si trilayer. (c), X-ray diffraction measurement verifying strain sharing. i, On-axis line scan around the (004) reflection before and after release of the trilayer NM. ii, Off-axis reciprocal-space map (RSM) around the (044) reflection for the as-grown trilayer structure.
