Figure 2

Doping of strain shared Si/SiGe/Si trilayer nanomembrane.

(a), Ion implantation and anneal processes are applied to as-grown Si/SiGe/Si trilayer. (b), i, Schematic of patterned strained NM for RF device fabrication. ii, 3D microscopic images of released strained trilayer, showing the un-flat topology. Note that the undoped region of the trilayer NM stays flat. (c), Doping of strained trilayer structure. i, Unstrained Si NM is ion implanted and annealed. ii, Si NM is thinned down. iii, SiGe and Si epi growth on thinned Si NM to form symmetric trilayer. iv, Release of Si/SiGe/Si trilayer. (d), Images of doped strained NM at different processing stages. i. Before release. ii. After finishing undercut, sitting on Si handling substrate. iii, After being transferred to a plastic substrate. (e), X-ray diffraction of as-grown ion-implanted trilayer NM. i. Off-axis reciprocal-space map (RSM) around the (044) reflection. ii. On-axis line scans around the (004) reflection comparing the doped and undoped as-grown trilayer NMs.