Figure 4
From: Fast flexible electronics with strained silicon nanomembranes
Device characteristics under bending.
(a), Bending setup for RF measurements. (b), A bent device array on a bending fixture. (c), Calculated mobility values from measured transconductance as a function of bending induced strain for both unstrained and strained devices. (d), fT and fmax of both unstrained and strained devices as a function of bending induced external strain.
