Figure 3
Switching effect for a 5.6-nm gate length MLG FET with a drain-source voltage of Vds = 0.5 V.
(a) Transmission spectra of the off-state (Vg = −5.0 V), on-state (Vg = 6.0 V) and an intermediate state (Vg = −3.0 V).The dashed vertical line indicates the bias window. DL/R denotes the Dirac point of the graphene in the left/right electrode; 
, 
and 
denote the Dirac point of the channel graphene under Vg = −5.0, −3.0 and 6.0 V, respectively. (b) Projected density of states on carbon atoms in the channel under Vg = −5.0, −3.0 and 6.0 V, respectively. (c) Transmission eigenstates of the off-state (Vg = −5.0 V) and on-state (Vg = 6.0 V) at Ef and k = (0.4, 0). The isovalue is 0.6 a.u.
