Figure 4
(a-e) Gate length scaling of the MLG FETs: transfer characteristics (a), on/off current ratio (b), transconductance obtained from the transfer characteristics at Vg = 0 V (c), intrinsic gate capacitance (d) and intrinsic cut-off frequency at Vg = 0 V (e). Gate dielectric thickness is tox = 1.4 nm, dielectric constant εr = 3.9 and drain-source voltage Vds = 0.5 V. The red dashed line in (e) shows a 1/Lgate dependence. (f) Product of the intrinsic cut-off frequency and the gate length as a function of the transconductance. The red dashed line is a linear fitting.
