Figure 6
(a) Ids-Vds output characteristics for the top-gated MLG FETs at variable gate voltages for Lgate = 6.4 nm. (b) Ids-Vds output characteristics for a pure MLG FET and a BN/MLG/BN sandwich FET with the same Lgate = 6.4 nm under a vertical electrical field of E⊥ = −1 V/Å. (c) Ids-Vds output characteristics for a pure MLG FET and a BLG FET with the same Lgate = 9.6 nm under a vertical electrical field of E⊥ = 3 V/nm. (d) Transmission spectra of the BN/MLG/BN sandwich FET with Lgate = 6.4 nm at Vds = 0.2 V (red curve) and 0.25 V (blue curve) under a vertical external electric field of -1 V/Å and a gate voltage of −1.6 V. The dashed vertical lines indicate the bias window.
