Figure 1

A scheme of sample preparation and the resistive switching behavior.
(a) Scheme of sample preparation for measurement. HRS and LRS regions of 2 mm × 2 mm were defined on the PCMO surface of a single sample using Cu tape. A W tip was used to switch 500 points densely distributed in the HRS region. The diameter of the tip was around 5 μm. The HRS region was switched to high resistance after the 1 and 2 sweep in the I–V characteristic, while the LRS region has already a low resistance in the initial state. (b) I–V characteristic of PCMO/Pt structure in a DC voltage sweep of ± 4 V and compliance current of 100 mA (top).