Figure 2
A scheme of Mn 3d electronic structure and Pr0.7Ca0.3MnO3 band structure of LRS and HRS.
(a) The scheme of the Mn 3d electronic structure of Mn3+-O2− and Mn4+-O2− octahedron. The crystal field splitting (10 Dq) separates t2g from eg levels. In the Mn3+-O2− octahedron, JT distortion further lifts the degeneracy of the eg levels. (b) A schematic of the density of states of the Mott-Hubbard insulator HRS Pr0.7Ca0.3MnO3 (the band splitting is induced by strong correlation effects) with a gap (as would be expected for the "parent compound" PrMnO3) and the hole-doped correlated semiconductor LRS Pr0.7Ca0.3MnO3. The shaded (unshaded) part corresponds to the occupied (empty) density of states measured in the UPS (NEXAFS) spectrum. (c) The UPS data of the LRS and HRS. (d) The NEXAFS data of the LRS and HRS.
