Figure 3
From: Tuning of the Rashba effect in Pb quantum well states via a variable Schottky barrier
Measured spin-integrated EDC for Pb/h-Si(111) at k∥ = −0.24 Å−1 (a) with Voigt intensity profiles obtained from the two-step fit. (b) Corresponding polarization data and fits of the x, y and z components. The dashed lines are fits performed with ΔE = −33.8 meV. (c) Measured k-dependent energy splittings and linear fits (lines) to obtain αRB for Pb/h-Si(111) and Pb/l-Si(111), respectively. (d) Measured αRB vs. doping concentration (left panel) of the heavily p-doped Si(111) and (right panel) of the differently n-doped Si(111) substrates.
