Figure 1 | Scientific Reports

Figure 1

From: Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature

Figure 1

Proposed thermal evolution mechanism of IZO:F precursor solution.

(a) TGA data of the IZO:F, InF3 and ZnF2 dried precursor solutions. (b) Raman spectra (90–800 cm−1) were measured in the hydrolyzed IZO:F, InF3 and ZnF2 precursor solutions annealed for 1 hr at the indicated temperatures of 100°C(red line, ), 250°C(blue line, ) and 500°C(green line, ), respectively. The black line() is the InF3 and ZnF2 data at room temperature.

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