Figure 4 | Scientific Reports

Figure 4

From: Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature

Figure 4

Gate bias stability of flexible IZO:F TFT.

It was measured under the (a) negative gate bias stress (NBS, VGS = −20 V), (b) positive gate bias stress (PBS, VGS = 20 V), (c) negative gate bias temperature stress (NBTS, VGS = −20 V, 60°C) and (d) positive gate bias temperature stress (PBTS, VGS = 20 V, 60°C), respectively. The stress condition was a VDS of 20 V and the stress duration for 1 hr in the dark chamber.

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