Figure 5
From: Isolated nanographene crystals for nano-floating gate in charge trapping memory
Tunable memory performances with different high-k functional layer.
(a) and (b) High frequency CV characteristics of MANGAS and MHNGHS memory devices under different gate voltage sweepings. (c) Tunable memory window of nanographene with different tunneling layers. (d) Data retention for MHNGHS with an improved charge loss.
