Table 1 Comparison of characteristics of OLEDs based on different dopant concentrations. The maximum values were obtained at J = 0.01, 0.04, 0.5, 1.0 and 0.02 mA/cm2 in 3, 6, 10 and 15 wt.% 4CzIPN-doped devices and a 6 wt.% Ir(ppy)3-doped device, respectively
EML | Current efficiency (cd/A) (@1,000 cd/m2) | Power efficiency (lm/W) (@1,000 cd/m2) | ηEQE (%) (@1,000 cd/m2) | LT90 (hour) | LT50 (hour) |
|---|---|---|---|---|---|
3wt%-4CzIPN | 50.0 (41.4) | 35.7 (20.9) | 17.0 (13.4) | 40 | 506 |
6wt%-4CzIPN | 49.2 (41.1) | 33.5 (19.6) | 15.6 (13.1) | 65 | 685 |
10wt%-4CzIPN | 47.9 (46.6) | 32.7 (28.1) | 14.2 (13.8) | 190 | ca. 1,900 |
15wt%-4CzIPN | 47.0 (46.5) | 30.7 (28.1) | 14.0 (13.9) | 243 | ca. 2,800 |
6wt%-Ir(ppy)3 | 42.9 (39.1) | 32.1 (19.2) | 11.8 (11.1) | 130 | ca. 4,500 |
