Figure 1
From: Controlled assembly of graphene-capped nickel, cobalt and iron silicides
Schematic illustration of the proposed approach.
At first, graphene is produced by CVD on 10 nm-thick metallic films of Ni(111), Co(0001) or Fe(110) grown epitaxially on W(110). Then, cycles of silicon deposition and annealing are performed to promote intercalation of silicon atoms underneath graphene and initiate silicide formation. Desirable composition and properties of graphene-protected silicides depend on the amount of deposited silicon as well as temperature and duration of annealing.
