Figure 1 | Scientific Reports

Figure 1

From: Key concepts behind forming-free resistive switching incorporated with rectifying transport properties

Figure 1

(a) I–V curves of ca. 500 nm thick BFO thin films on Pt(200 nm)/Ti(100 nm)/SiO2/Si substrates deposited at 650°C (Si-650, black solid squares) and at 550°C (Si-550, red solid circles). (b) I–V curves of ca. 500 nm thick BFO thin films on Pt(100 nm)/Ti(30 nm)/sapphire (Pt/Ti/sapphire, black solid circles) and on Pt(100 nm)/sapphire (Pt/sapphire, red empty circles) substrates deposited at 650°C. (a,b) The size of the top contact amounts to 0.03 cm2. (c) I–V curves of Si-650 for ~700 DC cycles. (d) Endurance test on Si-650. The LRS and HRS are set and reset by +6.5 V and -6.5 V voltage pulses, respectively and the resistance is read out by a +2 V voltage pulse.

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