Figure 1
Scanning X-ray nanodiffraction of arrays of epitaxial Ge crystals.
Top- and perspective-view SEM micrographs of 1.2 μm (a, d), 3.1 μm (b, e) and 7.3 μm (c, f) tall Ge crystals on patterned Si(001) wafer with 8-μm-tall and 2-μm-wide Si pillars, spaced by 1 μm. The insets in (a, b, c) show the total intensity for four crystals collected around the Ge(115) peak for all incidence angles. (g), Experimental setup at the ID01 beamline (ESRF). The primary beam (vector K0, incidence angle ω), focused down to ~ 300 × 500 nm by means of Fresnel zone plates, is moved across the Ge crystals array by a high-precision piezo-stage. The scattered beam (vector Ks) was collected by a 2D X-ray pixel detector.
