Figure 4
Three-dimensional X-ray nanodiffraction of a perfect epitaxial Ge crystal.
3D RSM around Si(115) and Ge (115) reciprocal lattice points and the corresponding projections onto the (Qx,Qz), (Qy,Qz) and (Qx,Qy) planes, recorded at the top of the 11-μm-tall Ge crystal of Fig. 3a. The Si and Ge peaks are plotted as iso-surfaces. The detailed region around the QxQz projection of Ge(115) reveals a very sharp peak, as sharp as the Si(115) peak, stemming from the defect-free epitaxial Ge crystal, superimposed onto a weaker, broader peak, corresponding to the defective, tensile-strained material in the trenches. The elongation of the sharp Si(115) and Ge(115) peaks is due to the divergence of the focused beam.
