Figure 1 | Scientific Reports

Figure 1

From: Solar-Blind Photodetectors for Harsh Electronics

Figure 1

(a) Cross-sectional TEM image of the AlN thin films deposited on a Si(100) substrate.

The inset shows the high-resolution TEM image of the marked area in (a). (b) The electron-diffraction pattern of the AlN films. (c) Raman spectrum of a 1-μm-thick AlN on Si(100) deposited by reactive sputtering at 350°C.

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