Figure 1
From: Atomic and electronic structure of an alloyed topological insulator, Bi1.5Sb0.5Te1.7Se1.3
Atomic structure and resistivity of the BSTS samples.
(a), Crystal structure of Bi2−xSbxTe3−ySey and optical image of the single crystal. (b), Temperature dependence of the resistivity of Bi1.5Sb0.5Te1.7Se1.3 samples, normalized by their room temperature values. In total, 5 crystals (S1-100 μm, S1-90 μm, S1-80 μm, S2-80 μm and S2-140 μm) were cut and measured, where they were labelled with the sample batch (S1 and S2) and their thickness in μm. The inset shows the Arrhenius plot for the normalized resistivity; the solid lines are the fits at high temperatures, yielding an activation energy of ~30 meV.
