Figure 3 | Scientific Reports

Figure 3

From: Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons

Figure 3

(a). PL spectrum measured over the temperature range from 77 K to 300 K of a monolayer MoS2 after being annealed to 500°C. (b). The PL at 77 K with different excitation laser power. Both a and b were taken in the presence of N2 gas (50 Torr). (c). Integrated PL intensity of bound exciton (XB) and free exciton (X0) as a function of excitation laser power.

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