Figure 6
From: High-mobility graphene on liquid p-block elements by ultra-low-loss CVD growth
Electrical properties of single-layer graphene grown on Ga surface.
(a) A scanning electron microscopy image of the bottom-gated graphene field effect transistor (FET) made on a 300-nm SiO2/p-Si substrate using electron beam lithography followed by a metal (Ti/Pd/Au 0.5/30/20 nm) deposition. The scale bar is 3 μm. (b) The typical transfer characteristics of the fabricated graphene FETs under ambient conditions.
